钛酸锶(SrTiO3)铝酸镧(LaAlO3) wafer

WaferHome can manufacture 钛酸锶(SrTiO3)铝酸镧(LaAlO3)晶体 Wafer

Specification for 钛酸锶(SrTiO3)铝酸镧(LaAlO3) wafer

                       
Grade Dimeter

Type/dopant

Orientaion

crystal struction dielectric constant coefficient of thermal expansion Resistivity dopant element concentration

Flat

Surface/Roughness Geometric parameter
钛酸锶晶体(SrTiO3) wafer

25.4mm 50.8mm

intrinsic

<100><111>

hexagonal tetragonal 300 10.4×10 -6/℃     N/A 16mm 22.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
钛酸锶晶体(SrTiO3) wafer

25.4mm 50.8mm

铌(Nb)

<100><111>

hexagonal tetragonal 300 10.4×10 -6/℃ 0.0035 - 0.08ohm-cm 1% - 0.1% N/A 16mm 22.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
钛酸锶晶体(SrTiO3) wafer

25.4mm 50.8mm

钕(Nd)

<100><111>

hexagonal tetragonal 300 10.4×10 -6/℃ 0.0035 - 0.08ohm-cm 1% - 0.1% N/A 16mm 22.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
钛酸锶晶体(SrTiO3) wafer

25.4mm 50.8mm

Fe

<100><111>

hexagonal tetragonal 300 10.4×10 -6/℃ 0.0035 - 0.08ohm-cm 1% - 0.1% N/A 16mm 22.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
铝酸镧(LaAlO3)wafer 25.4mm 50.8mm intrinsic/Mg/Fe <100><111> hexagona tetragonal 21

9.4x10-6

0.9 - 9 *E11 ohm-cm

1.0*E11 - 9.9 *E19 ohm-cm

N/A 16mm 22.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um